New IGBTs and IGCTs, together with appropriate snubber and freewheeling diodes up to 5.5 kV (6.5 kV respectively), are opening up the possibility of establishing power electronics for the medium voltage level with manageable effort. Tri–level switching topologies and cascaded switching systems are the preferred architectures used here.
By Werner Bresch, Managing Director of GvA Leistungselektronik GmbH, and Dr. Henrik Siebel, Managing Director of Siebel & Scholl GmbH
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In the last few years we have witnessed a phase of rapid evolution in the field of power semiconductorswhich has by no means reached its conclusion.
With the IGCT and the IGBT the user now has two additional types of high-capacity semiconductor switches at his disposal besides the GTO. Do they compete with or complement each other?
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Allocation the root of all evil
Recently, the number of incidents users submit complaints to the manufacturer about the
power semiconductor failures is steadily increasing. Failure analyses show that these
power semiconductors are counterfeits or rejects originally intended for scrapping.
How can you protect yourself from such counterfeits and what is the background leading
up to such criminal acts?
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The IGBT drive circuity represents the greatest single influence for operational security in the entire inverter.
The IGBT is a voltage controlled power semiconductor that can be turned with a 15V control Voltage without consuming driving power. This statement often can be found in basic application notes for the use of IGBT and MOSFET components; and few statements are so misleeading.
This and many other aspects are discussed in the download.
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